MMBD7000
Document number: DS12025 Rev. 9 - 2
2 of 5
www.diodes.com
July 2012
? Diodes Incorporated
MMBD7000
Maximum Ratings
(@TA
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Non-Repetitive Peak Reverse Voltage
VRM
100
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
75
V
RMS Reverse Voltage
VR(RMS)
53
V
Forward Continuous Current (Note 5)
IFM
300
mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0μs
@ t = 1.0s
IFSM
2.0
1.0
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 5)
PD
350
mW
Thermal Resistance Junction to Ambient Air (Note 5)
RθJA
357
°C/W
Operating and Storage Temperature Range
TJ , TSTG
-65 to +150
°C
Electrical Characteristics
(@TA
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 6)
V(BR)R
75
?
V
IR
= 100μA
Forward Voltage
VF
0.55
0.67
0.75
?
0.70
0.82
1.10
1.25
V
IF
= 1.0mA
IF
= 10mA
IF
= 50mA
IF
= 150mA
Reverse Current (Note 6)
IR
?
1.0
3.0
100
25
μA
μA
μA
nA
VR
= 50V
VR
= 100V
VR
= 50V, T
J
= +125
°C
VR
= 20V
Total Capacitance
CT
?
2.0
pF
VR
= 0, f = 1.0MHz
Reverse Recovery Time
trr
?
4.0
ns
IF
= I
R
= 10mA,
Irr = 0.1 x IR, RL
= 100
Ω
Notes: 5. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
6. Short duration pulse test used to minimize self-heating effect.
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
MMBD7000HC-7-F
DIODE ARRAY 100V 300MA SOT23
MMBD7000LT1G
DIODE SWITCH DUAL 100V SOT23
MMBD7000
DIODE ULTRAFAST HI COND SOT-23
MMBD701LT3G
DIODE SCHOTTKY 70V SOT-23
MMBD717LT1G
DIODE SCHOTTKY 200MW 20V SOT323
MMBD770T1
DIODE SCHOTTKY 1A 70V SOT-323
MMBF4416A
IC AMP RF N-CHANNEL SOT-23
MMBF4416LT1G
MOSFET SS N-CHAN VHF 30V SOT23
相关代理商/技术参数
MMBD7000-7-F
功能描述:二极管 - 通用，功率，开关 75V 350mW RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube
MMBD7000-E3-08
制造商:Vishay Semiconductors 功能描述: 制造商:Vishay Siliconix 功能描述:MMBD7000-E3-08 - Cut TR (SOS) 制造商:Vishay Semiconductors 功能描述:DIODE ARRAY 100V 200MA SOT23 制造商:Vishay Intertechnologies 功能描述:Diodes - General Purpose, Power, Switching 100 Volt 200mA 4ns 500mA IFSM 制造商:Vishay Intertechnologies 功能描述:SWITCHING DIODE GENPURP SOT23
MMBD7000-E3-18
制造商:Vishay Siliconix 功能描述:MMBD7000-E3-18 - Cut TR (SOS) 制造商:Vishay Intertechnologies 功能描述:Diodes - General Purpose, Power, Switching 100 Volt 200mA 4ns 500mA IFSM 制造商:Vishay Intertechnologies 功能描述:SWITCHING DIODE GENPURP SOT23
MMBD7000G
制造商:ZOWIE 制造商全称:Zowie Technology Corporation 功能描述:Dual Switching Diode Lead free product
MMBD7000-G3-08
制造商:Vishay Siliconix 功能描述:MMBD7000-G3-08 - Bulk 制造商:Vishay Siliconix 功能描述:MMBD7000-G3-08 - Cut TR (SOS) 制造商:Vishay Intertechnologies 功能描述:SWITCHING DIODE GENPURP SOT23
MMBD7000-G3-18
制造商:Vishay Siliconix 功能描述:MMBD7000-G3-18 - Cut TR (SOS) 制造商:Vishay Intertechnologies 功能描述:SWITCHING DIODE GENPURP SOT23
MMBD7000-GS08
功能描述:二极管 - 通用，功率，开关 100mA 100 Volt RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube
MMBD7000HC-7-F
功能描述:二极管 - 通用，功率，开关 S. SIG DIODE,SWITCH 0.35W,100V RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube